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Adamantane-based molecular glass resist for 193-nm lithography

机译:基于金刚烷的分子玻璃抗蚀剂193-nm光刻

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We have already developed several candidates of future resists using not only monomer but also the molecularglass resists as high performance resist materials and discussed them on the former talk'. Those novel adamantane basedmolecular glass resists were made sure of sufficiently high Tg and the highly etch resistance. However some of themwere not satisfied as resist materials due to their higher or lower solubility. Then we have designed and synthesized newadamantane based molecular glass resists containing acetal and ester moieties for the lower dose sensitivity and theexcellent transparency at 193 nm. Further more, the protecting groups were modified in order to control the solubilityinto both a conventional solvents for the spin on the wafers and a developer.Novel adamantane-based molecular glass resists were modified their polarity of the hydroxyl group of cholicacid moiety in order to improve their film thickness loss by subtrahend and / or by capping the hydroxyl group. Thesetreatments affected their adhesion to a wafer greatly. The capping technique using with any units can introduce variousfunctional groups and applied versatile improvements. GR-14 that were capped their hydroxyl group with acetyl unit was imaged sub 100 nm line and space by the EBexposure. Although, the excess subtraction of hydroxyl group has reduced its film property like GR-11 that made fromlithocholic acid. We made sure that the imperfect resist for its improvement of the film thickness loss such as GR-17,GR-18 and GR-19 was affected by BARCs as the under layer.
机译:我们已经开发了几种未来抗蚀剂的候选人,不仅使用单体,而且分子胶也抗拒高性能抗蚀剂材料,并在前谈话中讨论它们。这些新的基于基于微分的微分玻璃抗蚀剂,确保了足够高的Tg和高度蚀刻性。然而,由于其溶解度较高或较低,一些明显是抗蚀材料的一些。然后我们设计并合成了含有缩醛和酯部分的甘露烷基的分子玻璃抗蚀剂,用于较低剂量敏感性和193nm的细化透明度。进一步,保护基团以控制solubilityinto既为在晶片上和基于金刚烷developer.Novel分子玻璃抗蚀剂自旋常规溶剂进行了修改进行了修改他们的羟基cholicacid部分的极性,以提高它们的膜厚度损失通过亚拉生和/或通过覆盖羟基。 Thesetreatments大大影响了它们对晶片的粘附性。使用任何单位的封盖技术可以引入各种功能组并应用多功能改进。用乙酰单元覆盖它们的羟基的GR-14是成像的,通过EBEEPLOSE成像亚100nm线和空间。虽然,羟基的过量减法已经降低了其薄膜性质,如锂电偶酸制成的GR-11。我们确保通过Br-17,Gr-18和Gr-19改善其改善薄膜厚度损失的不完美抗蚀剂受到Barcs作为下层的影响。

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