All-Dry Resist Processes for 193-NM Lithography

摘要

We report on two different all-dry resist schemes for 193-nm lithography, onenegative tone and one positive tone. Our negative tone resist is an extension of our initial work on all-dry photoresists. This scheme employs a bilayer in which the imaging layer is formed by plasma enhanced chemical vapor deposition (PECVD) from tetramethylsilane (TMS) and deposited onto PECVD carbon-based planarizing layers. Figure 1 shows SEMs of dark field and light field octagons patterned in projection on Lincoln Laboratory's 0.5-NA 193-nm Micrascan system. These 0.225-micrometers and 0.200-micrometers line and space features were obtained at a dose of approx. 58 MnJ/sq cm. Dry development of the exposed resist was accomplished using Cl2 chemistry in a helicon high-ion-density etching tool. Pattern transfer was performed in the helicon tool with oxygen-based chemistries. p1.