A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage

摘要

A series of resolution enhancement materials (REMs) for 193-nm resist employing poly(vinyl alcohol), 2-hydroxybenzyl alcohol (2HBA), and a non-ionic surfactant have been prepared and evaluated. The resolution enhancement has been achieved by resist pattern thickening (pattern space shrinkage) that is caused by the interaction between REMs and 193-nm resists. The key component, 2HBA, demonstrated the capability of shrinkage of the printed spaces or holes on 193-nm resists without a cross-linking reaction. This system expanded the process margin and minimized the dependence of resist pattern sizes, pitches, and shapes in the shrinkage reaction that had been one of the critical issues in the cross-linking-type chemically shrinking materials. The optimized REM afforded about 10 to 15-nm shrinkage for hole, trench, and lines and spaces (L/S) patterns with various pitches that was suitable for advanced Logic LSI application.