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Advances in Resist Technology and Processing XII

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1.High-aspect-ratio resist for thick-film a

机译：高纵横比抗蚀剂，用于厚膜
- 作者：Nancy C. LaBianca;IBM Thomas J. Watson Research Ctr.;Yalesville;CT;USA;Jeffrey D. Gelorme;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
2.Lithographic performance of a positive photoresist for thick-film a

机译：正性光刻胶在厚膜上的光刻性能
- 作者：Alfred F. Renaldo;IBM Corp.;San Jose;CA;USA;Laurie J. Lauchlan;IBM Corp.;San Jose;CA;USA;Donald C. Hofer;IBM Almaden Research Ctr.;San Martin;CA;USA;William D. Hinsberg;IBM Almaden Research Ctr.;San Jose;CA;USA;Dennis R. McKean;IBM Almaden Research Ctr.;San Jose;CA;USA;Hugo A. Santini;IBM Almaden Research Ctr.;San Jose;CA;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
3.Molecular simulation of photoresists II: a

机译：光刻胶的分子模拟II：
- 作者：Andrew J. Blakeney;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Lawrence Ferreira;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Medhat A. Toukhy;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Patricia Morra;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Nicholas M. Reynolds;Molecular Simulations;Inc.;Burlington;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
4.Multilayer process of T-shaped transistor gates for GaAs-pseudomorphic HEMTs using e-beam resist technology and i-line negative resist with optical ste

机译：使用电子束抗蚀剂技术和带光学引导的i线负性抗蚀剂的GaAs伪形HEMT的T形晶体管栅极的多层工艺
- 作者：Joachim Schneider;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg Im Breisgau;Federal Republic of Germany;Fred Becker;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg Im Breisgau;Federal Republic of Germany;Karlheinz Glorer;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg Im Breisgau;Federal Republic of Germany;Birgit Weismann;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg Im Breisgau;Federal Republic of Germany;Norbert Muenzel;OCG Microelectronic Materials AG;Basel;Switzerland.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
5.Applications of plasma-polymerized methylsilane as a resist and silicondioxide precursor for 193- and 248-nm lithography,

机译：等离子体聚合的甲基硅烷作为抗蚀剂和二氧化硅前体在193和248 nm光刻中的应用，
- 作者：Timothy W. Weidman;ATT Bell Labs.;Murray Hill;NJ;USA;Olivier P. Joubert;ATT Bell Labs.;Meylan Cedex;France;Ajey M. Joshi;ATT Bell Labs.;Murray Hill;NJ;USA;Robert L. Kostelak;ATT Bell Labs.;Murray Hill;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
6.Advanced photoresist for high-throughput i-line ste

机译：适用于高通量i-line Ste的高级光刻胶
- 作者：Anthony Canize;Hoechst Celanese Corp.;Flemington;NJ;USA;Walter Spiess;Hoechst AG;Wiesbaden;Federal Republic of Germany;Stanley A. Ficner;Hoechst Celanese Corp.;Somerville;NJ;USA;Ping-Hung Lu;Hoechst Celanese Corp.;Somerville;NJ;USA;Ralph R. Dammel;Hoechst Celanese Corp.;Somerville;NJ;USA;Yvette M. Perez;Hoechst Celanese Corp.;Somerville;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
7.Novel 3D resist shaping process via e-beam lithography, with applicationfor the formation of blased planar waveguide gratings and planar lenses on GaAs,

机译：通过电子束光刻进行的新型3D抗蚀剂成型工艺，可用于在GaAs上形成叶片状平面波导光栅和平面透镜，
- 作者：Louis C. Poli;Army Research Lab.;Ft. Monmouth;NJ;USA;Christine A. Kondek;Army Research Lab.;Fort Monmouth;NJ;USA;Anthony E. Novembre;ATT Bell Labs.;Murray Hill;NJ;USA;George McLane;Army Research Lab.;Ft. Monmouth;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
8.All-dry resist processes for 193-nm lithography

机译：用于193 nm光刻的全干式抗蚀剂工艺
- 作者：Mark W. Horn;MIT Lincoln Lab.;North Chelmsford;MA;USA;B.E. Maxwell;MIT Lincoln Lab.;Lexington;MA;USA;Roderick R. Kunz;MIT Lincoln Lab.;Lexington;MA;USA;Michael S. Hibbs;MIT Lincoln Lab.;Essex Junction;VT;USA;Lynn M. Eriksen;MIT Lincoln Lab.;Lexington;MA;USA;Susan C. Palmateer;MIT Lincoln Lab.;Lexington;MA;USA;A.R. Forte;MIT Lincoln Lab.;Lexington;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
9.High-contrast process using a positive-tone resist with antistatic coating and high-energy (100-keV) e-beam lithography for fabricating diffractive optical elements (DOE) on quartz

机译：使用具有抗静电涂层的正型抗蚀剂和高能（100-keV）电子束光刻技术进行的高对比度工艺，用于在石英上制造衍射光学元件（DOE）
- 作者：Louis C. Poli;Army Research Lab.;Ft. Monmouth;NJ;USA;Christine A. Kondek;Army Research Lab.;Fort Monmouth;NJ;USA;Barry L. Shoop;U.S. Military Academy/West Point;West Point;NY;USA;George McLane;Army Research Lab.;Ft. Monmouth;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
10.Modeling of a resist technology for sub-100-nm structuring

机译：用于100纳米以下结构的抗蚀剂技术建模
- 作者：Ulrich A. Jagdhold;Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH;Frankfurt (Oder);Federal Republic of Germany;Lothar Bauch;Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH;Dresden;Federal Republic of Germany.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
11.SEMATECH and the national technology roadmap: needs and challenges

机译：SEMATECH和国家技术路线图：需求和挑战
- 作者：Karen H. Brown;SEMATECH;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
12.Effects of relative humidity variation on photoresist processing

机译：相对湿度变化对光刻胶加工的影响
- 作者：Eric H. Bokelberg;IBM Corp.;Essex Junction;VT;USA;William Venet;IBM Corp.;Essex Junction;VT;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
13.Evaluation and verification of improved edgebead removal process in CMOS production

机译：评估和验证CMOS生产中改进的边缘珠去除工艺
- 作者：Lorna D. Christensen;TDK;Austin;TX;USA;M.Marchione;TDK;Tustin;CA;USA;K.Luce;TDK;Tustin;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
14.Mechanism of inhibitor action in novolak film

机译：酚醛清漆膜中抑制剂作用机理
- 作者：Hsiao-Yi Shih;Polytechnic Univ.;Brooklyn;NY;USA;Arnost Reiser;Polytechnic Univ.;Brooklyn;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
15.Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography

机译：基于per四羧酸衍生物的干法光刻胶材料，用于激光光刻
- 作者：Vladimir E. Agabekov;Institute of Physical Organic Chemistry;Minsk;Belarus;Victor A. Azarko;Institute of Physical Organic Chemistry;Minsk;Belarus;Olga P. Nevdakh;Institute of Physical Organic Chemistry;Minsk;Belarus.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
16.Effect of basic additives on sensitivity and diffusion of acid in chemical amplification resists

机译：碱性添加剂对化学放大抗蚀剂中酸的敏感性和扩散的影响
- 作者：Koji Asakawa;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Tohru Ushirogouchi;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Makoto Nakase;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
17.Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization

机译：产酸剂结构对高温烘烤稳定环境中T顶形成的影响
- 作者：Hiroshi Ito;IBM Almaden Research Ctr.;San Jose;CA;USA;Gregory Breyta;IBM Almaden Research Ctr.;San Jose;CA;USA;Donald C. Hofer;IBM Almaden Research Ctr.;San Martin;CA;USA;Thomas Fischer;IBM Sindelfingen;Sindelfingen;Federal Republic of Germany;Bruce Prime;IBM Storage Systems Div.;San Jose;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
18.Mechanism of amine additive in chemically amplified resist visualized by using Monte Carlo simulation

机译：蒙特卡罗模拟观察化学放大抗蚀剂中胺添加剂的机理
- 作者：Tohru Ushirogouchi;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Koji Asakawa;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Makoto Nakase;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Akinori Hongu;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
19.Novel inorganic photoinitiators

机译：新型无机光引发剂
- 作者：Charles Kutal;Univ. of Georgia;Athens;GA;USA;Bentley J. Palmer;Univ. of Georgia;Athens;GA;USA;Zhikai Wang;Univ. of Georgia;Athens;GA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
20.Series of AZ-compatible negative photoresists

机译：AZ兼容的负性光刻胶系列
- 作者：Anja Voigt;Micro Allresist GmbH;Berlin;Federal Republic of Germany;G.Gruetzner;Micro Allresist GmbH;Berlin;Federal Republic of Germany;E.Sauer;Micro Allresist GmbH;Berlin;Federal Republic of Germany;S.Helm;Micro Allresist GmbH;Berlin;Federal Republic of Germany;T.Harder;Micro Allresist GmbH;Berlin;Federal Republic of Germany;S.Fehlberg;Micro Allresist GmbH;Berlin;Federal Republic of Germany;Juergen Bendig;Micro Allresist GmbH;Berlin;Federal Republic of Germany.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
21.Studies on the adhesion contact angle of various substrates and their photoresist profiles

机译：各种基材的粘附接触角及其光致抗蚀剂谱的研究
- 作者：Chang-Ming Dai;Industrial Technology Research Institute;Chutung;Hsinchu;Taiwan;Daniel H. Lee;VISC;Hsinchu;Taiwan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
22.t-Boc protected poly(p-hydroxystyrene-alt-carbon monoxide): a new class of deep-UV resists

机译：t-Boc保护的聚（对羟基苯乙烯-alt-一氧化碳）：新型的深紫外线抗蚀剂
- 作者：M.S. Brookhart;Univ. of North Carolina/Chapel Hill;Chapel Hill;NC;USA;Joseph M. DeSimone;Univ. of North Carolina/Chapel Hill;Chapel Hill;NC;USA;Robert E. Johnson;Hoechst Celanese Corp.;Summit;NJ;USA;Shonali Tahiliani;Univ. of North Carolina/Chapel Hill;Chapel Hill;NC;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
23.Applications of plasma-polymerized methylsilane as a resist and silicon dioxide precursor for 193- and 248-nm lithography

机译：等离子体聚合的甲基硅烷作为抗蚀剂和二氧化硅前体在193和248 nm光刻中的应用
- 作者：Author(s): Timothy W. Weidman ATT Bell Labs. Murray Hill NJ USA;Olivier P. Joubert ATT Bell Labs. Meylan Cedex France;Ajey M. Joshi ATT Bell Labs. Murray Hill NJ USA;Robert L. Kostelak ATT Bell Labs. Murray Hill NJ USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
24.Design synthesis and characterization of poly(trimethylsilylmethyl methacrylate-co-chloromethyl styrene) for 193-nm exposure

机译：193nm曝光的聚（甲基丙烯酸三甲基甲硅烷基甲基丙烯酸甲酯-共氯甲基苯乙烯）的设计合成与表征
- 作者：Bruce W. Smith;Rochester Institute of Technology;Rochester;NY;USA;David A. Mixon;ATT Bell Labs.;Murray Hill;NJ;USA;Anthony E. Novembre;ATT Bell Labs.;Murray Hill;NJ;USA;Shahid A. Butt;Rochester Institute of Technology;Rochester;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
25.Direct evaluation of airborne contamination in chemically amplified resist films

机译：直接评估化学放大抗蚀剂膜中的空气传播污染
- 作者：Yoshio Yamashita;SORTEC Corp.;Tsukuba-shi;Ibaraki;Japan;Takao Taguchi;SORTEC Corp.;Ibaraki;Japan;Takeo Watanabe;SORTEC Corp.;Ibaraki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
26.Formulation and modeling of dyed positive i-line resist for control of the reflective notching and CD variation

机译：染色的正性i线抗蚀剂的配方和建模，用于控制反射凹口和CD变化
- 作者：Marina Plat;IBM Corp.;Hopewell Junction;NY;USA;William R. Brunsvold;IBM Corp.;Hopewell Junction;NY;USA;Randolph S. Smith;IBM Corp.;Hopewell Junction;NY;USA;Nicholas K. Eib;IBM Corp.;Santa Clara;CA;USA;Christopher F. Lyons;IBM Corp.;Sunnyvale;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
27.High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography

机译：使用双功能甲硅烷基化试剂B（DMA）MS进行ArF准分子激光光刻的高分辨率表面成像工艺
- 作者：Katsumi Maeda;NEC Corp.;Miyamae-ku;Kawasaki;Japan;Takeshi Ohfuji;NEC Corp.;Sagamihara;Kanagawa;Japan;Naoaki Aizaki;NEC Corp.;Sagamihara-shi;Kanagawa;Japan;Etsuo Hasegawa;NEC Corp.;Miyamae-ku;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
28.Kinetics of chemically amplified resists

机译：化学放大抗蚀剂的动力学
- 作者：Gregory M. Wallraff;IBM Almaden Research Ctr.;San Jose;CA;USA;William D. Hinsberg;IBM Almaden Research Ctr.;San Jose;CA;USA;Frances A. Houle;IBM Almaden Research Ctr.;San Jose;CA;USA;Juli Opitz;IBM Almaden Research Ctr.;Sunnyvale;CA;USA;Dale Hopper;IBM Almaden Research Ctr.;San Jose;CA;USA;John M. Hutchinson;Univ. of California/Berkeley;Santa Clara;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
29.Optimization of CD control in DUV positive resists: influence of photoresist viscoelastic properties on PEB conditions

机译：DUV正性抗蚀剂中CD控制的优化：光致抗蚀剂粘弹性对PEB条件的影响
- 作者：Francoise Vinet;LETI/CEA Technologies Avancees;Grenoble Cedex;France;N.Buffet;LETI/CEA Technologies Avancees;Grenoble Cedex 9;France;Pierre Fanton;LETI/CEA Technologies Avancees;Grenoble Cedex 9;France;L.Pain;France Telecom CNET Grenoble;Meylan Cedex;France;Patrick J. Paniez;France Telecom CNET Grenoble;Meylan Cedex;France.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
30.Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists

机译：使用晶片曲率测量（WCM）技术确定正DUV抗蚀剂的工艺窗口
- 作者：Patrick J. Paniez;France Telecom CNET Grenoble;Meylan Cedex;France;Andre Schiltz;France Telecom CNET Grenoble;Meylan Cedex;France.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
31.Characterization and modeling of a chemically amplified resist for ArF lithography

机译：用于ArF光刻的化学放大抗蚀剂的表征和建模
- 作者：John M. Hutchinson;Intel Corp.;Santa Clara;CA;USA;Gregory M. Wallraff;IBM Almaden Research Ctr.;San Jose;CA;USA;William D. Hinsberg;IBM Almaden Research Ctr.;San Jose;CA;USA;Juli Opitz;IBM Almaden Research Ctr.;Sunnyvale;CA;USA;William G. Oldham;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
32.Chemically ampilified ArF excimer laser resists using the absorption band shift method

机译：化学吸收式ArF准分子激光抗蚀剂，采用吸收带移法
- 作者：Makoto Nakase;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Takuya Naito;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Koji Asakawa;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Akinori Hongu;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Naomi Shida;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan;Tohru Ushirogouchi;Toshiba Corp.;Saiwai-ku;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
33.Development-free vapor laser photolithography with 0.4-um resolution

机译：分辨率为0.4um的免显影蒸气激光光刻
- 作者：Yong Y. Yang;Institute of Photographic Chemistry;Beijing;China;Xiao-Yin Hong;Tsinghua Univ.;Beijing;China;Liming Dai;CSIRO;Clayton;VIC;Australia;Albert W. Mau;CSIRO;Melbourne (Clayton);Victoria;Australia.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
34.Effect of reducing the contaminant concentration when patterning a chemically amplified positive resist

机译：对化学放大正型抗蚀剂进行构图时降低污染物浓度的效果
- 作者：Akira Oikawa;Fujitsu Ltd.;Kawasaki;Japan;Yasunori Hatakenaka;Fujitsu VLSI Ltd.;Kuwana-gun;Japan;Yumiko Ikeda;Fujitsu Ltd.;Kawasaki;Japan;Yoko Kokubo;Fujitsu Ltd.;Kawasaki;Japan;Motoko Tanishima;Fujitsu Ltd.;Kawasaki;Japan;Nobuaki Santoh;Fujitsu Ltd.;Kuwana-gun;Japan;Naomichi Abe;Fujitsu Ltd.;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
35.Manufacturing requirements for a single-wafer develop process

机译：单晶圆开发过程的制造要求
- 作者：Eric H. Bokelberg;IBM Corp.;Essex Junction;VT;USA;James L. Goetz;IBM Corp.;Essex Junction;VT;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
36.Nonchemically amplified positive photoresist for synchrotron radiation x-ray lithography

机译：非化学放大正性光刻胶，用于同步辐射X射线光刻
- 作者：Daniel Bucca;IBM Thomas J. Watson Research Ctr.;Alexandria;VA;USA;Ari Aviram;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;David E. Seeger;IBM Thomas J. Watson Research Ctr.;Yorktown Heights;NY;USA;Willard E. Conley;IBM Corp.;Hopewell Junction;NY;USA;William R. Brunsvold;IBM Corp.;Hopewell Junction;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
37.Optimization of a 193-nm silylation process for sub-0.25-um lithography

机译：0.25 nm以下光刻的193 nm硅烷化工艺的优化
- 作者：Susan C. Palmateer;MIT Lincoln Lab.;Lexington;MA;USA;Roderick R. Kunz;MIT Lincoln Lab.;Lexington;MA;USA;Mark W. Horn;MIT Lincoln Lab.;North Chelmsford;MA;USA;A.R. Forte;MIT Lincoln Lab.;Lexington;MA;USA;Mordechai Rothschild;MIT Lincoln Lab.;Lexington;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
38.Quantitative analysis of chemically amplified negative photoresist using mirror-backed infrared reflection absorption spectroscopy

机译：镜面红外反射吸收光谱法对化学放大负性光刻胶进行定量分析
- 作者：Chris J. Gamsky;Univ. of Wisconsin/Madison;Madison;WI;USA;Paul M. Dentinger;Univ. of Wisconsin/Madison;Madison;WI;USA;Glenn R. Howes;Univ. of Wisconsin/Madison;Madison;WI;USA;James W. Taylor;Univ. of Wisconsin/Madison;Stoughton;WI;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
39.Thermal rearrangement of novolak resins used in microlithography

机译：微光刻中使用的线型酚醛清漆树脂的热重排
- 作者：Ricky Hardy;Shipley Co. Inc.;Marlborough;MA;USA;Anthony Zampini;Shipley Co. Inc.;Marlborough;MA;USA;Michael J. Monaghan;Shipley Co. Inc.;Marlborough;MA;USA;Michael J. OLeary;Shipley Co. Inc.;Malborough;MA;USA;William J. Cardin;Shipley Co. Inc.;Marlborough;MA;USA;Timothy J. Eugster;Shipley Co. Inc.;Malborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
40.DUV positive resist system designed for Micrascan use

机译：专为Micrascan使用的DUV正性抗蚀剂系统
- 作者：James W. Thackeray;Shipley Co. Inc.;Marlborough;MA;USA;Timothy G. Adams;Shipley Co. Inc.;Judbury;MA;USA;Michael F. Cronin;Shipley Co. Inc.;Franklin;MA;USA;Theodore H. Fedynyshyn;Shipley Co. Inc.;Sudbury;MA;USA;J. Michael Mori;Shipley Co. Inc.;Marlborough;MA;USA;John Petersen;Shipley Co. Inc.;Marlborough;MA;USA;Roger F. Sinta;Shipley Co. Inc.;Marlborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
41.Effect of molecular weight distribution on the dissolution properties of novolac blends

机译：分子量分布对酚醛清漆共混物溶解性能的影响
- 作者：Pavlos C. Tsiartas;Univ. of Texas/Austin;Austin;TX;USA;Logan L. Simpson;Univ. of Texas/Austin;Austin;TX;USA;Anwei Qin;Univ. of Texas/Austin;Austin;TX;USA;C. Grant Willson;Univ. of Texas/Austin;Austin;TX;USA;Robert D. Allen;IBM Almaden Research Ctr.;San Jose;CA;USA;Val J. Krukonis;Phasex Corp.;Lawrence;MA;USA;Paula M. Gallagher-Wetmore;Phasex Corp.;Lawrence;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
42.Effects of substrate treatment in positive chemically amplified resist

机译：基材处理对正性化学放大抗蚀剂的影响
- 作者：Akihiro Usujima;Fujitsu Ltd.;Kuwana-gun;Mie;Japan;Kazuki Tago;Kyusyu Fujitsu Electronics Ltd.;Higashimorokata-gun;Miyazaki;Japan;Akira Oikawa;Fujitsu Ltd.;Kawasaki;Japan;Kenji Nakagawa;Fujitsu Ltd.;Kuwana-gun Mie;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
43.Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography

机译：基于甲基丙烯酸金刚烷酯的化学放大抗蚀剂在193 nm光刻中的评估
- 作者：Makoto Takahashi;Fujitsu Ltd.;Kawasaki;Japan;Satoshi Takechi;Fujitsu Ltd.;Kawasaki;Japan;Yuko Kaimoto;Fujitsu Ltd.;Kawasaki;Japan;Isamu Hanyu;Fujitsu Ltd.;Nakahara-ku;Kawasaki;Japan;Naomichi Abe;Fujitsu Ltd.;Kawasaki;Japan;Koji Nozaki;Fujitsu Labs. Ltd.;Atsugi;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
44.Investigation into the origin of microbridging in chemically amplified negative-tone photoresists

机译：化学放大负性光刻胶中微桥的起源研究
- 作者：Leo L. Linehan;IBM Corp.;Hopewell Junction;NY;USA;Randolph S. Smith;IBM Corp.;Hopewell Junction;NY;USA;Judy Dorn;IBM Corp.;Hopewell Junction;NY;USA;James T. Fahey;IBM Corp.;Hopewell Junction;NY;USA;Wayne M. Moreau;IBM Corp.;Hopewell Junction;NY;USA;Gary T. Spinillo;IBM Corp.;Hopewell Junction;NY;USA;Erik A. Puttlitz;IBM Corp.;Colchester;VT;USA;James P. Collins;IBM Corp.;Essex Junction;VT;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
45.Modeling and simulation of the PRIME process using the SLITS simulator

机译：使用SLITS模拟器对PRIME过程进行建模和仿真
- 作者：Declan McDonagh;Univ. of Limerick;Limerick;Ireland;Khalil I. Arshak;Univ. of Limerick;Limerick;Ireland;A.Arshak;Univ. of Limerick;Limerick;Ireland;J.Braddell;National Microelectronics Research Ctr.;Cork;Ireland;B.P. Mathur;Univ. of Limerick;Limerick;Ireland.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
46.Optimization of dissolution-rate characteristics of chemically amplified positive resist

机译：化学放大正性抗蚀剂溶解速率特性的优化
- 作者：Toshiro Itani;NEC Corp.;Sagamihara;Kanagawa;Japan;Haruo Iwasaki;NEC Corp.;Sagamihara;Kanagawa;Japan;Hiroshi Yoshino;NEC Corp.;Sagamihara;Kanagawa;Japan;Masashi Fujimoto;NEC Corp.;Sagamihara;Kanagawa;Japan;Kunihiko Kasama;NEC Corp.;Sagamihara;Kanagawa;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
47.Performance properties of near-monodisperse novolak resins

机译：接近单分散的线型酚醛清漆树脂的性能
- 作者：Robert D. Allen;IBM Almaden Research Ctr.;San Jose;CA;USA;K.J. Chen;IBM Corp.;Hopewell Junction;NY;USA;Paula M. Gallagher-Wetmore;Phasex Corp.;Lawrence;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
48.Spectroscopic characterization of molecular interactions between DNQ-PACs and phenolic resins using selectively nitrogen-15 labeled DNQs

机译：使用选择性氮15标记的DNQ光谱表征DNQ-PAC与酚醛树脂之间的分子相互作用
- 作者：Marie Borzo;Hoechst Celanese Corp.;Summit;NJ;USA;Joseph J. Rafalko;Hoechst Celanese Corp.;Summit;NJ;USA;Monica Joe;Hoechst Celanese Corp.;Summit;NJ;USA;Ralph R. Dammel;Hoechst Celanese Corp.;Somerville;NJ;USA;Mohammad D. Rahman;Hoechst Celanese Corp.;Somerville;NJ;USA;Martine A. Ziliox;Bruker Instruments;Inc.;Billerica;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
49.Unique spin coat process for positive photoresists

机译：独特的旋涂工艺，用于正性光刻胶
- 作者：Dan Lyons;OCG Microelectronic Materials;Inc.;Nesconset;NY;USA;Bernard T. Beauchemin;Jr.;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Susan Garrard;National Semiconductor Corp.;South Portland;ME;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
50.UV pretreatments for improved etching of organic antireflective coating (ARC) layer

机译：紫外线预处理可改善对有机抗反射涂层（ARC）层的蚀刻
- 作者：Linda J. Insalaco;Fusion Semiconductor Systems;Rockville;MD;USA;Vandana Krishnamurthy;Brewer Science;Inc.;Rolla;MO;USA;John L. Sturtevant;SEMATECH;Austin;TX;USA;James C. Mitchener;Novellus Systems;Rockville;MD;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
51.Vacuum photoresists on a base of phenoxazine and their lithographic properties

机译：吩恶嗪基真空光刻胶及其光刻性能
- 作者：Vladimir E. Agabekov;Institute of Physical-Organic Chemistry;Minsk;Belarus;Olga E. Ignasheva;Institute of Physical-Organic Chemistry;Minsk;Belarus;Yurii I. Gudimenko;Institute of Physical-Organic Chemistry;Minsk;Belarus;Vladimir N. Belyatsky;Institute of Physical Organic Chemistry;Minsk;Belarus.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
52.Characterization of profile dependency on nitride substrate thickness for a chemically amplified I-line negative resist

机译：化学放大的I线负性抗蚀剂的轮廓依赖于氮化物衬底厚度的特性
- 作者：Erik A. Puttlitz;IBM Corp.;Colchester;VT;USA;James P. Collins;IBM Corp.;Essex Junction;VT;USA;Thomas M. Glynn;IBM Corp.;Essex Junction;VT;USA;Leo L. Linehan;IBM Corp.;Hopewell Junction;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
53.Chemically amplified resist convertible into inorganic silicate glass (GPR)

机译：化学放大的抗蚀剂，可转换为无机硅酸盐玻璃（GPR）
- 作者：Miwa Sakata;Oki Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan;Maki Kosuge;Oki Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan;Hideyuki Jinbo;Oki Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan;Toshio Ito;Oki Electric Industry Co.;Ltd.;Hachioji-shi;Tokyo;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
54.Effect of dissolution inhibitors on the dissolution characteristics of chemically amplified positive-tone electron beam resist

机译：溶解抑制剂对化学放大正电子束抗蚀剂溶解特性的影响
- 作者：Hideo Horibe;Mitsubishi Electric Corp.;Amagasaki;Japan;Teruhiko Kumada;Mitsubishi Electric Corp.;Amagasaki;Hyogo;Japan;Shigeru Kubota;Mitsubishi Electric Corp.;Amagasaki;Hyogo;Japan;Yoshika Kimura;Mitsubishi Electric Corp.;Itami;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
55.Effect of PAC structure and resist morphology on the control of surface inhibition in positive photoresist systems

机译：PAC结构和抗蚀剂形态对正性光刻胶系统表面抑制控制的影响
- 作者：Bernard T. Beauchemin;Jr.;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Rodney J. Hurditch;OCG Microelectronic Materials;Inc.;Providence;RI;USA;Medhat A. Toukhy;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Andrew J. Blakeney;OCG Microelectronic Materials;Inc.;East Providence;RI;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
56.Environmentally stable chemically amplified resist effects of organic salt additives

机译：有机盐添加剂对环境稳定的化学放大的抗蚀作用
- 作者：Ei Yano;Fujitsu Labs. Ltd.;Atsugi;Japan;Yohko Kuramitsu;Fujitsu Labs. Ltd.;Atsugi;Kanagawa;Japan;Keiji Watanabe;Fujitsu Labs. Ltd.;Atsugi;Japan;Takahisa Namiki;Fujitsu Labs. Ltd.;Atsugi;Japan;Koji Nozaki;Fujitsu Labs. Ltd.;Atsugi;Japan;Miwa Igarashi;Fujitsu Labs. Ltd.;Atsugi;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
57.Molecular simulation of photoresists I: basic techniques for molecular simulation

机译：光刻胶的分子模拟I：分子模拟的基本技术
- 作者：Andrew J. Blakeney;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Lawrence Ferreira;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;Nicholas M. Reynolds;Molecular Simulations;Inc.;Burlington;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
58.193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system

机译：193 nm单层正性抗蚀剂：将抗蚀刻性融入高分辨率成像系统中
- 作者：Robert D. Allen;IBM Almaden Research Ctr.;San Jose;CA;USA;Gregory M. Wallraff;IBM Almaden Research Ctr.;San Jose;CA;USA;Richard A. DiPietro;IBM Almaden Research Ctr.;San Jose;CA;USA;Donald C. Hofer;IBM Almaden Research Ctr.;San Martin;CA;USA;Roderick R. Kunz;MIT Lincoln Lab.;Lexington;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
59.Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer

机译：用于ArF准分子激光光刻的正化学放大抗蚀剂，由新型透明光酸产生剂和脂环族三元共聚物组成
- 作者：Kaichiro Nakano;NEC Corp.;Miyamae-ku;Kawasaki;Kanagawa;Japan;Katsumi Maeda;NEC Corp.;Miyamae-ku;Kawasaki;Japan;Shigeyuki Iwasa;NEC Corp.;Sagamihara;Kanagawa;Japan;Takeshi Ohfuji;NEC Corp.;Sagamihara;Kanagawa;Japan;Etsuo Hasegawa;NEC Corp.;Miyamae-ku;Kawasaki;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
60.Reaction diffusion kinetics in deep-UV positive-tone resist systems

机译：深紫外正性光刻胶系统中的反应扩散动力学
- 作者：Marco A. Zuniga;Univ. of California/Berkeley;Berkeley;CA;USA;Gregory M. Wallraff;IBM Almaden Research Ctr.;San Jose;CA;USA;Andrew R. Neureuther;Univ. of California/Berkeley;Berkeley;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
61.Study for the design of high-resolution novolak-DNQ photoresist: the effects of low-molecular-weight phenolic compounds on resist systems

机译：高分辨率线型酚醛清漆-DNQ光致抗蚀剂设计研究：低分子量酚类化合物对抗蚀剂体系的影响
- 作者：Hidetoshi Miyamoto;Japan Synthetic Rubber Co.;Ltd.;Yokkaichi;Mie;Japan;Toshio Nakamura;Japan Synthetic Rubber Co.;Ltd.;Yokkaichi;Mie;Japan;Katsumi Inomata;Japan Synthetic Rubber Co.;Ltd.;Mie;Japan;Toshiyuki Ota;Japan Synthetic Rubber Co.;Ltd.;Mie;Japan;Akira Tsuji;Japan Synthetic Rubber Co.;Ltd.;Mie;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
62.Thick film photoresist resolution enhancement with surfactant surface treatment

机译：通过表面活性剂表面处理提高厚膜光刻胶的分辨率
- 作者：Dennis R. McKean;IBM Corp.;San Jose;CA;USA;Thomas P. Russell;IBM Corp.;San Jose;CA;USA;Alfred F. Renaldo;IBM Corp.;San Jose;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
63.Novel 3D resist shaping process via e-beam lithography with application for the formation of blased planar waveguide gratings and planar lenses on GaAs

机译：通过电子束光刻的新型3D抗蚀剂成型工艺及其在GaAs上形成叶片状平面波导光栅和平面透镜的应用
- 作者：Author(s): Louis C. Poli Army Research Lab. Ft. Monmouth NJ USA;Christine A. Kondek Army Research Lab. Fort Monmouth NJ USA;Anthony E. Novembre ATT Bell Labs. Murray Hill NJ USA;George McLane Army Research Lab. Ft. Monmouth NJ USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
64.Aminodisilanes as silylating agents for dry-developed positive-tone resists for deep-ultraviolet (248-nm) and extreme ultraviolet (13.5-nm) microlithography

机译：氨基硅烷作为硅烷化剂，用于干法开发的用于深紫外（248 nm）和远紫外（13.5 nm）微光刻的正性抗蚀剂
- 作者：David R. Wheeler;Sandia National Labs.;Albuquerque;NM;USA;Richard S. Hutton;ATT Bell Labs.;Murray Hill;NJ;USA;Craig H. Boyce;ATT Bell Labs.;Cambridge;MA;USA;Susan M. Stein;ATT Bell Labs.;Murray Hill;NJ;USA;Raymond A. Cirelli;ATT Bell Labs.;Hillsborough;NJ;USA;Gary N. Taylor;ATT Bell Labs.;Murray Hill;NJ;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
65.Considerations in the development of deep-UV photoresist materials and processes

机译：深紫外光致抗蚀剂材料和工艺开发中的注意事项
- 作者：Willard E. Conley;IBM Corp.;Hopewell Junction;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
66.Shot-size reduction of photoresist formulations

机译：减小光刻胶配方的尺寸
- 作者：Wayne M. Moreau;IBM Corp.;Hopewell Junction;NY;USA;Kathy Cornett;IBM Corp.;Hopewell Junction;NY;USA;James T. Fahey;IBM Corp.;Hopewell Junction;NY;USA;Leo L. Linehan;IBM Corp.;Hopewell Junction;NY;USA;Warren Montgomery;IBM Corp.;Essex Junction;VT;USA;Marina Plat;IBM Corp.;Hopewell Junction;NY;USA;Randolph S. Smith;IBM Corp.;Hopewell Junction;NY;USA;Robert L. Wood;IBM Corp.;Hopewell Junction;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
67.Characterization and modeling of a positive-acting chemically amplified resist

机译：正作用化学放大抗蚀剂的表征和建模
- 作者：John S. Petersen;Shipley Co. Inc.;Austin;TX;USA;Chris A. Mack;FINLE Technologies;Inc.;Austin;TX;USA;James W. Thackeray;Shipley Co. Inc.;Marlborough;MA;USA;Roger F. Sinta;Shipley Co. Inc.;Marlborough;MA;USA;Theodore H. Fedynyshyn;Shipley Co. Inc.;Sudbury;MA;USA;J. Michael Mori;Shipley Co. Inc.;Marlborough;MA;USA;Jeffrey D. Byers;SEMATECH;Austin;TX;USA;Daniel A. Miller;SEMATECH;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
68.Dielectric and chemical characteristics of electron-beam-cured photoresist

机译：电子束固化光刻胶的介电和化学特性
- 作者：Ernesto S. Sison;Hoechst Celanese Corp.;Bridgewater;NJ;USA;Mohammad D. Rahman;Hoechst Celanese Corp.;Somerville;NJ;USA;Dana L. Durham;Hoechst Celanese Corp.;Branchburg;NJ;USA;James Hermanowski;Hoechst Celanese Corp.;Somerville;NJ;USA;Matthew F. Ross;Electron Vision Corp.;San Diego;CA;USA;Michael Jennison;Rocky Mountain Magnetics;Inc.;Louisville;CO;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
69.Nonconstant diffusion coefficients: short description of modeling and comparison to experimental results

机译：非恒定扩散系数：对模型的简短描述以及与实验结果的比较
- 作者：John S. Petersen;Shipley Co. Inc.;Austin;TX;USA;Chris A. Mack;FINLE Technologies;Inc.;Austin;TX;USA;John L. Sturtevant;SEMATECH;Austin;TX;USA;Jeffrey D. Byers;SEMATECH;Austin;TX;USA;Daniel A. Miller;SEMATECH;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
70.Photolithography process characterization and 3D simulation using track-mounted development rate monitor data

机译：使用轨道安装式显影速率监控器数据进行光刻工艺表征和3D仿真
- 作者：Saraubh Dutta Chowdhury;Site Services;Inc.;Santa Clara;CA;USA;David Alexander;Site Services;Inc.;Santa Clara;CA;USA;Mark Goldman;Site Services;Inc.;Santa Clara;CA;USA;Alan W. Kukas;Site Services;Inc.;Santa Clara;CA;USA;Nigel R. Farrar;Hewlett-Packard Co.;Palo Alto;CA;USA;Cliff H. Takemoto;National Semiconductor Corp.;San Jose;CA;USA;Bruce W. Smith;Rochester Institute of Technology;Rochester;NY;USA;Linard Karklin;L. K. Consulting;Sunnyvale;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
71.Plasma etch characteristics of electron-beam processed photoresist

机译：电子束处理光刻胶的等离子刻蚀特性
- 作者：Matthew F. Ross;Electron Vision Corp.;San Diego;CA;USA;D.Comfort;Matrix Integrated Systems;Richmond;CA;USA;Georges Gorin;Matrix Integrated Systems;Richmond;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
72.Process optimization of a positive-tone chemically amplified resist for 0.25-um lithography using a vector scan e-beam tool

机译：使用矢量扫描电子束工具优化用于0.25um光刻的正性化学放大抗蚀剂的工艺
- 作者：Ahmad D. Katnani;IBM Corp.;Poughkeepsie;NY;USA;Dominic Schepis;IBM Corp.;Hopewell Junction;NY;USA;Ranee W. Kwong;IBM Corp.;Hopewell Junction;NY;USA;Wu-Song Huang;IBM Corp.;Hopewell Junction;NY;USA;Zoilo C. Tan;Etec Systems;Inc.;Cupertino;CA;USA;Charles A. Sauer;Etec Systems;Inc.;Hayward;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
73.Utilizing contrast enhancement material as a topside antireflective coating (TARC) for maximizing an i-line 0.35-um process window

机译：利用对比度增强材料作为顶部抗反射涂层（TARC），以最大化i-line 0.35um工艺窗口
- 作者：Matthew L. Moynihan;Shipley Co. Inc.;Leominster;MA;USA;Mark S. Markowski;Shipley Co. Inc.;Marlborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
74.Contamination control for processing DUV chemically amplified photoresists

机译：用于处理DUV化学放大光刻胶的污染控制
- 作者：Joseph C. Vigil;Motorola;Austin;TX;USA;Mark W. Barrick;Motorola;Austin;TX;USA;Tim H. Grafe;Donaldson Co.;Minneapolis;MN;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
75.Improved resist profiles and CD control through optimized thin dielectric stacks

机译：通过优化的薄介电叠层改善抗蚀剂轮廓和CD控制
- 作者：Christopher F. Lyons;Advanced Micro Devices;Inc.;Sunnyvale;CA;USA;Mahesh Agrawal;Advanced Micro Devices;Inc.;Sunnyvale;CA;USA;Bhanwar Singh;Advanced Micro Devices;Inc.;Sunnyvale;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
76.Investigation of deep-ultraviolet photoresists on TiN substrates

机译：TiN基片上的深紫外光致抗蚀剂的研究
- 作者：Kim R. Dean;SEMATECH;Austin;TX;USA;Ronald A. Carpio;SEMATECH;Austin;TX;USA;Georgia K. Rich;SEMATECH;Austin;TX;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
77.Lithography and the future of Moore's law

机译：光刻技术和摩尔定律的未来
- 作者：Gordon E. Moore;Intel Corp.;Santa Clara;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
78.Lithography for ULSI

机译：ULSI光刻
- 作者：Shinji Okazaki;Hitachi;Ltd.;Kokubunji;Tokyo;Japan.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
79.New positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group

机译：基于聚（4-羟基苯乙烯）和酸不稳定保护基的新型正性深紫外光致抗蚀剂
- 作者：James T. Fahey;IBM Corp.;Hopewell Junction;NY;USA;Willard E. Conley;IBM Corp.;Hopewell Junction;NY;USA;William R. Brunsvold;IBM Corp.;Hopewell Junction;NY;USA;Dominic C. Yang;IBM Corp.;Hopewell Junction;NY;USA;Wayne M. Moreau;IBM Corp.;Hopewell Junction;NY;USA;George Jordhamo;IBM Corp.;Hopewell Junction;NY;USA;Steve Pratt;IBM Corp.;Hopewell Junction;NY;USA;Dale M. Crockatt;IBM Corp.;Hopewell Junction;NY;USA;George J. Hefferon;IBM Corp.;Fishkill;NY;USA;Robert L. Wood;IBM Corp.;Hopewell Junction;NY;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
80.Nonlinear imaging effects using high-contrast resists

机译：使用高对比度抗蚀剂的非线性成像效果
- 作者：Rodney J. Hurditch;OCG Microelectronic Materials;Inc.;Providence;RI;USA;Steven G. Hansen;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;John Ferri;OCG Microelectronic Materials;Inc.;East Providence;RI;USA;David J. Brzozowy;OCG Microelectronic Materials;Inc.;East Providence;RI;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
81.Profile defects in novolac/DNQ resists: I. formation of microgrooves

机译：线型酚醛清漆/ DNQ抗蚀剂中的轮廓缺陷：I.微沟槽的形成
- 作者：Peter Trefonas;III;Shipley Co. Inc.;Marlborough;MA;USA;George P. Mirth;Shipley Co. Inc.;Saratoga;CA;USA;Michael J. Monaghan;Shipley Co. Inc.;Marlborough;MA;USA;Pamela Turci;Shipley Co. Inc.;Marlborough;MA;USA;L.Mero;Shipley Co. Inc.;Marlboro;MA;USA;Catherine C. Meister;Shipley Co. Inc.;Marlborough;MA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
82.Supercritical fluid processing: a new dry technique for photoresist developing

机译：超临界流体处理：光刻胶显影的新干法
- 作者：Paula M. Gallagher-Wetmore;Phasex Corp.;Lawrence;MA;USA;Gregory M. Wallraff;IBM Almaden Research Ctr.;San Jose;CA;USA;Robert D. Allen;IBM Almaden Research Ctr.;San Jose;CA;USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年
83.Structural design of ketal and acetal blocking groups in two-component chemically amplified positive DUV resists

机译：两组分化学放大正型DUV抗蚀剂中的缩酮和缩醛封闭基团的结构设计
- 作者：Author(s): Carlo Mertesdorf OCG Microelectronic Materials AG Basel Switzerland;Norbert Muenzel OCG Microelectronic Materials AG Basel Switzerland;Heinz E. Holzwarth OCG Microelectronic Materials AG Basel Switzerland;Pasquale A. Falcigno OCG Microelectronic Materials AG Basle Switzerland;Hans-Thomas Schacht OCG Microelectronic Materials AG Basel Switzerland;Ottmar Rohde OCG Microelectronic Materials AG Basel Switzerland;Reinhard Schulz OCG Microelectronic Materials AG Basel Switzerland;Sydney G. Slater OCG Microelectronic Materials Inc. East Providence RI USA;David Frey OCG Microelectronic Materials Inc. East Providence RI USA;Omkaram Nalamasu ATT Bell Labs. Murray Hill NJ USA;Allen G. Timko ATT Bell Labs. Murray Hill NJ USA;Thomas X. Neenan ATT Bell Labs. Murray Hill NJ USA.
- 会议名称：《Advances in Resist Technology and Processing XII》 | 1995年