Development of new resist materials for 193-nm dry and immersion lithography

摘要

We have earlier developed mono cyclic fluoropolymers, FPRs and FUGUs, for the base resin of the resist for 157-nm lithography. However, considering the fact that the semiconductor industry is marching toward 193-nm immersion lithography for the next generation lithography node in place of 157-nm lithography, we have begun to apply 157-nm fluoropolymer materials to 193-nm applications. The major problem to use fluoropolymer backbones for 193 nm is their poor dry etching resistance. In this paper, we describe a new series of fluorinated copolymers for 193-nm lithography, a combination of FUGU monomer and several types of acrylates. We found that dry etching resistance of them was improved while keeping excellent transparency and these polymers show high sensitivity toward exposure light and good dissolution behavior.