首页> 外文会议>International Solid-State Sensors, Actuators and Microsystems Conference >MINIATURE HIGH SENSITIVITY ULTRASONIC TRANSDUCERS USING EPITAXIAL PZT THIN FILMS GROWN ON EPITAXIAL Γ-Al_2O_3/Si SUBSTRATES FOR SMART DEVICES
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MINIATURE HIGH SENSITIVITY ULTRASONIC TRANSDUCERS USING EPITAXIAL PZT THIN FILMS GROWN ON EPITAXIAL Γ-Al_2O_3/Si SUBSTRATES FOR SMART DEVICES

机译:用于智能设备的外延γ-AL_2O_3 / SI基板上生长的外延PZT薄膜微型高灵敏度超声换能器

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Miniature high sensitivity ultrasonic transducers have been fabricated using epitaxial lead zirconate titanate, Pb (Zr_x, Ti_(1-x))O_3 (PZT), thin films grown on epitaxial SrRuO_3/Pt/γ-Al_2O_3/Si substrates. The 1.3μm-thick PZT films were prepared by a sol-gel method. The receiving sensitivity of the fabricated transducer was measured at the frequency of 2.5 MHz. The fabricated transducer has good receiving sensitivity.
机译:微型高灵敏度超声换能器已经使用外延锆锆钛酸钛酸盐,Pb(Zr_x,Ti_(1-x))O_3(PZT),在外延Srruo_3 / Pt /γ-Al_2O_3 / Si基材上生长的薄膜。通过溶胶 - 凝胶法制制备1.3μm厚的PZT薄膜。在2.5MHz的频率下测量制造的换能器的接收灵敏度。制造的换能器具有良好的接收灵敏度。

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