首页> 外国专利> NON-DESTRUCTIVE EPITAXIAL LIFT-OFF OF LARGE AREA III-V THIN-FILM GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND SUBSTRATE REUSE

NON-DESTRUCTIVE EPITAXIAL LIFT-OFF OF LARGE AREA III-V THIN-FILM GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND SUBSTRATE REUSE

机译:金属有机化学气相沉积法和基质再利用对大面积III-V薄膜生长的无损表皮剥离

摘要

Disclosed are methods for preserving the integrity of large-sized growth substrates. The methods pertain to accelerating the rate of epitaxial liftoff, and improved cleaning and etching steps. Also disclosed are devices produced therein.
机译:公开了用于保持大型生长基质的完整性的方法。该方法涉及加快外延剥离速率,并改善清洁和蚀刻步骤。还公开了其中产生的装置。

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