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Critique of high-frequency performance of carbon nanotube FETs

机译:碳纳米管FET的高频性能批判

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摘要

The emerging body of literature on the high frequency performance of carbon nanotube field-effect tran sistors (CNFETs) is critically reviewed. The focus is on the figure-of-merit fT, the common-source, short-circuit current gain. The intentions are: to direct attention to the most relevant measured data; to compare this data with record values for other transistors, and with predicted results for CNFETs; to explain the large spread in predicted data; to offer a prognosis for high-frequency CNFETs.
机译:对碳纳米管场效应Tran姐妹群(CNFET)的高频性能的新出现的文献体系受到严重综述。焦点是在铭记上的优点F T ,公共源,短路电流增益。意图是:直接关注最相关的测量数据;将此数据与其他晶体管的记录值进行比较,以及CNFET的预测结果;解释预测数据的大差;为高频CNFET提供预后。

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