Critique of High-Frequency Performance of Carbon Nanotube FETs

摘要

The emerging body of literature on the high-frequency performance of carbon nanotube field-effect transistors (CNFETs) is critically reviewed. The focus is on the figure-of-merit f_T, the common-source, short-circuit current gain. The intentions are: to direct attention to the most relevant measured data; to compare this data with record values for other transistors, and with predicted results for CNFETs; to explain the large spread in predicted data; to offer a prognosis for high-frequency CNFETs.