Correlation Between The High-k Properties And The Interfacial Chemical Structure of ALD HfO{sub}2 Thin Films on Si, Si{sub}(1-x)Ge{sub}x, And Ge Substrates

摘要

The changes in the electrical and chemical properties of HfO{sub}2 films grown by atomic layer deposition on Si, Si{sub}0.8Ge{sub}0.2, and Ge substrates during post-deposition annealing (PDA) were studied. The migration of Ge played a key role in reducing the capacitance equivalent thickness (CET) after PDA. High resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure analyses confirmed that Ge atoms which had already diffused into the HfO{sub}2 upper layer during deposition were drawn back to the film/substrate interfacial layer during PDA.