THIN FILM TRANSISTOR HAVING AN OXIDE SEMICONDUCTOR LAYER AND AN ARRAY SUBSTRATE INCLUDING THE SAME CAPABLE OF RESTRAINING A VERTICAL CROSS TALK AND AN AFTERIMAGE DUE TO PARASITIC CAPACITANCE AND A THIN FILM TRANSISTOR PROPERTY AND IMPROVING IMAGE QUALITY

摘要

PURPOSE: A thin film transistor having an oxide semiconductor layer and an array substrate including the same are provided to improve the charging characteristic of a pixel electrode by reducing the parasitic capacitance due to overlap of a gate electrode, a source, and a drain electrode.;CONSTITUTION: An oxide semiconductor layer(120) has a T shape or a rotated T shape. A drain electrode(136) is separated from a source electrode(133). The drain electrode has two U-shaped ends which face each other. The end facing the source electrode is overlapped with the oxide semiconductor layer. One end of the drain electrode is overlapped with the oxide semiconductor layer.;COPYRIGHT KIPO 2013