THIN FILM TRANSISTOR INCLUDING AN OXIDE SEMICONDUCTOR LAYER AS AN OHMIC CONTACT LAYER AND MANUFACTURING METHOD THEREOF CAPABLE OF IMPLEMENTING A HIGH CONTACT PROPERTY BETWEEN A SOURCE ELECTRODE AND A DRAIN ELECTRODE

摘要

PURPOSE: A thin film transistor including an oxide semiconductor layer as an ohmic contact layer and a manufacturing method thereof are provided to prevent a lifting phenomenon between films by forming the ohmic contact layer with a physical deposition method instead of a CVD method.;CONSTITUTION: A gate electrode(130) is formed on a substrate(110). A gate insulation layer(140) is formed on the gate electrode. An active layer(150) is formed on the gate insulation layer. A source electrode(170) and a drain electrode(175) are formed on the gate insulation layer and the active layer. An ohmic contact layer(160) is arranged between the active layer and the source and drain electrodes.;COPYRIGHT KIPO 2011