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首页> 外文期刊>Journal of Electronic Materials >Top-Contact Pentacene-Based Organic Thin Film Transistor (OTFT) with N,N '-Bis(3-Methyl Phenyl)-N,N '-Diphenyl Benzidine (TPD)/Au Bilayer Source-Drain Electrode
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Top-Contact Pentacene-Based Organic Thin Film Transistor (OTFT) with N,N '-Bis(3-Methyl Phenyl)-N,N '-Diphenyl Benzidine (TPD)/Au Bilayer Source-Drain Electrode

机译:基于顶部接触的五烯类有机薄膜晶体管(OTFT),具有N,N'-BIS(3-甲基苯基)-N,N'二苯基苯并苯并(TPD)/ Au双层源 - 漏电极

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摘要

A top-contact Pentacene-based organic thin film transistor (OTFT) with N,N'-Bis (3-methyl phenyl)-N,N'-diphenyl benzidine (TPD)/Au bilayer source-drain electrode is reported. The devices with TPD/Au bilayer source-drain (S-D) electrodes show better performance than the single layer S-D electrode OTFT devices. The field-effect mobility of 4.13 cm(2) v(-1) s(-1,) the on-off ratio of 1.86 x 10(7), the threshold voltage of -4 v and the subthreshold slope of .27 v/decade, respectively, are obtained from the device with a TPD/Au bilayer source-drain electrode.
机译:报道了具有N,N'-BIS(3-甲基苯基)-N,N'-二苯基苯并苄酯(TPD)/ Au双层源 - 漏极的顶部接触的五烯基有机薄膜晶体管(OTFT)。 具有TPD / AU双层源极 - 漏极(S-D)电极的器件显示比单层S-D电极OTFT器件更好的性能。 4.13cm(2)v(-1)s(-1,)的场效应迁移率为1.86 x 10(7),阈值电压为-4 v和亚阈值斜率.27 v /十年分别从具有TPD / Au双层源 - 漏电极的装置获得。

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