首页> 外国专利> ORGANIC SEMICONDUCTOR THIN FILM TRANSISTOR ELEMENT, MANUFACTURING METHOD OF SOURCE ELECTRODE AND DRAIN ELECTRODE OF ORGANIC SEMICONDUCTOR THIN FILM TRANSISTOR ELEMENT, ORGANIC SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURING METHOD

ORGANIC SEMICONDUCTOR THIN FILM TRANSISTOR ELEMENT, MANUFACTURING METHOD OF SOURCE ELECTRODE AND DRAIN ELECTRODE OF ORGANIC SEMICONDUCTOR THIN FILM TRANSISTOR ELEMENT, ORGANIC SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURING METHOD

机译:有机半导体薄膜晶体管元件,有机半导体薄膜晶体管元件的源极电极和漏极电极的制造方法,有机半导体薄膜晶体管制造方法

摘要

PROBLEM TO BE SOLVED: To provide an organic semiconductor thin film transistor element and an organic semiconductor thin film transistor element manufacturing method, which allow easy formation of a source electrode and a drain electrode which have tapered shapes on a channel side in a thin film transistor using an organic semiconductor manufactured by a printing method and a manufacturing method of the same.SOLUTION: In an organic semiconductor thin film transistor element 17 comprising on an insulating substrate 10, a gate electrode 11, a gate insulation layer 12, a source electrode 13, a drain electrode 14 and an organic semiconductor layer 15 in this order, ends of the source electrode and the drain electrode at least on the channel side have coffee-stain-like tapered parts.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种有机半导体薄膜晶体管元件和有机半导体薄膜晶体管元件的制造方法,其能够容易地在薄膜晶体管的沟道侧形成具有锥形形状的源电极和漏电极。解决方案:在有机半导体薄膜晶体管元件17中,该有机半导体薄膜晶体管元件17包括在绝缘基板10上的栅电极11,栅绝缘层12,源电极13。 ,漏极14和有机半导体层15按此顺序排列,源极和漏极的至少在通道侧的端部具有咖啡渍状的锥形部分。

著录项

  • 公开/公告号JP6492523B2

    专利类型

  • 公开/公告日2019-04-03

    原文格式PDF

  • 申请/专利权人 凸版印刷株式会社;

    申请/专利号JP20140214412

  • 发明设计人 田中 幸一;

    申请日2014-10-21

  • 分类号H01L29/786;H01L21/336;H01L51/05;H01L21/28;H01L29/41;H01L29/417;H01L51/40;H01L21/288;G09F9/30;

  • 国家 JP

  • 入库时间 2022-08-21 12:19:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号