Diffusion length in p-type HgCdTe epitaxial layers determination

摘要

Charge carriers diffusion length needs to be exactly calculated in p-type HgCdTe (MCT) epitaxial layers to design focal plane array (FPA) with small crosstalk and high performance. The mathematical model and the computing program to determine the minority carriers diffusion length from experimental data of photodiode spatial signal response versus the optical spot position along the pixel have been developed. The correlation of diffusion length data with other methods data has been analyzed.