High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-wall Reactor

摘要

A high growth rate SiC CVD epitaxial process has been developed in a horizontal hot-wall reactor for thick epilayer growth. The effect of growth conditions on growth rate and thickness uniformity has been investigated. Growth rates up to 20 mum/h have been achieved. Good thickness uniformity of 5 percent over 2" epiwafers is reproducibly obtained for a growth rate of 15 mum/h. Smooth surface morphology has been observed for epilayers with thickness up to 50 mum. The high growth rate process feasibility in this reactor configuration has been demonstrated by the growth of 119 mum thick epiwafer with good thickness line uniformity of 5.2 percent along gas flow direction and a background doping of below 7X10~(14) cm~(-3).