4H-SiC Lateral RESURF MOSFETs on Carbon-face Substrates

摘要

We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel mobility of a lateral test MOSFET on a C-face was 41 cm~2/Vs, which was much higher than 5 cm~2/Vs for that on a Si-face. The specific on-resistance of the lateral RESURF MOSFET on a C-face was improved to 79 mOMEGAcm~2 as comparison with 2400 mOMEGAcm for Si-face. The breakdown voltage was 490V for Si-face and 460V for C-face, which was 82 percent and 79 percent of the designed breakdown voltage of 600V, respectively. The device breakdown occurred destructively at the gate electrode edge.