Improved SiO_(2/4)H-SiC Interface Defect Density Using Forming Gas Annealing

摘要

We investigated the influence of forming gas annealing (FGA) before and after oxide deposition on the SiO_2/4H-SiC interface defect density (D_(it)). For MOS capacitors (MOSCAPs) that were processed using FGAs at temperatures above 1050°C, CV characterization revealed decreased flat band voltage shifts and stretch-out for different sweep directions and frequencies. Moreover, constant-capacitance deep level transient spectroscopy (CC-DLTS) was performed and showed D_(it) levels below 10~(12) cm~(-2)eV~(-1) for post deposition FGA at 1200°C. Finally, lateral MOSFETs were fabricated to analyze the temperature-dependent threshold voltage (Vth) shift.