Electronic structure of graphite/6H-SiC interfaces

摘要

We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Φ_(b,n)~(Si) = 0.3±0.1 eV and Φ_(b,p)~(Si) = 2.7±0.1 eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(0001) we find Φ_(b,n)~C = 1.3±0.1 eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.