An improved EKV model for partially depleted SOI devices

摘要

The modeling of MOSFET for analog applications, using long and short channel devices, requires compact models which describes the transistor behavior with more precision including the high order derivatives. In the present paper an improvement of the EKV model is presented, using the same parameters. A comparison with PD SOI MOSFETs of different channel length shows a very good agreement between experimental and modeled data.