A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devices

摘要

We present a new unified analytical front surface potential model. It is valid in all regions of operation (from the sub-threshold to the strong inversion) and an analytical expression for the critical voltage V{sub}C delineating the partially depleted (PD) and the fully depleted (FD) region is introduced. The drift/diffusion equation is used to derive a single formula for the drain current valid in all regions of operation. The model has been fit to a range of the Si film thiclcness t{sub}(Si) values of SOI device.