SERIES RESISTANCE INFLUENCE ON THE LINEAR KINK EFFECT IN TWIN-GATE PARTIALLY DEPLETED SOI NMOSFETS

摘要

This work elaborates on the influence of the series resistance on the linear kink effect (LKE) in twin-gate partially depleted (PD) Silicon-on-Insulator (SOI) nMOSFETs. The study is based on two-dimensional numerical simulations and is validated by experimental results. A relationship between the total resistance and the apparent mobility degradation factor is reported, showing that the twin-gate structure and a conventional SOI transistor with an external resistance both present a similar LKE reduction. The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be also shown.