STRESS INDUCED LEAKAGE CURRENT AND TIME DEPENDENT DIELECTRIC BREAKDOWN CHARACTERISTICS OF ULTRA-THIN HFO_2 GATE DIELECTRICS

摘要

The reliability characteristics of the ultra-thin (EOT～0.9nm) HfO_2 gated nMOS capacitor with HfN metal gate under negative constant voltage stress (CVS) were studied. The results indicate that SILC effect in the ultra thin HfO_2 gate dielectric is almost negligible. For the gate injection, the interfacial layer (IL) initiated breakdown under a low CVS and HfO_2 bulk initiated breakdown under a high CVS dominate the dielectric breakdown of the ultra thin HfO_2 gate stack.