The Effects of UV Treatment on Thermal and Plasma-Enhanced Atomic Layer Deposition of ZnO Thin Film Transistor

机译：UV处理对ZnO薄膜晶体管热和等离子体增强原子层沉积的影响

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We investigated the ultraviolet (UV) light photostability of plasma-enhanced and thermal atomic layer deposition of ZnO thin film transistor (TFT). The negative shift of threshold voltage was similarly observed in both cases by UV exposure due to the increment of carrier concentration. Additionally, the transfer curves of TFT using thermal ALD ZnO:N active layer were exhibited recovery characteristics.

机译：我们研究了ZnO薄膜晶体管（TFT）的等离子体增强和热原子层沉积的紫外（UV）光光稳定性。由于载体浓度的增量，通过UV曝光在两种情况下，在两种情况下相似地观察了阈值电压的负变化。另外，使用热ALD ZnO：N有源层的TFT的转移曲线表现出回收特性。

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《International Conference on the Physics of Semiconductors》|2011年||共2页
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Jae-Min Kim; S. J. Lim; Doyoung Kim; Hyungjun Kim;
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中图分类 TB974-53;
关键词
TFT; ZnO; Atomic Layer Deposition (ALD); Plasma-Enhanced ALD (PE-ALD); UV treatment;

机译：TFT;ZnO;原子层沉积（ALD）;等离子体增强ALD（PE-ALD）;UV治疗;

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专利

1. The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor [J] . Lim SJ, Kim JM, Kim D, Electrochemical and solid-state letters . 2010,第5期

机译：紫外线对等离子体增强原子层沉积ZnO薄膜晶体管的影响
2. ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the 'Atomic Layer Deposition Window' [J] . Julian Pilz, Alberto Perrotta, Guenther Leising, Physica status solidi . 2020,第8期

机译：等离子增强原子层沉积生长的ZnO薄膜：“原子层沉积窗口”内外的材料特性
3. Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition [J] . Taewook Nam, Chang Wan Lee, Hyun Jae Kim, Applied Surface Science . 2014,第MARa15期

机译：通过热和等离子体增强原子层沉积生长的Ga掺杂ZnO（GZO）薄膜的生长特性和性能
4. The Effects of UV Treatment on Thermal and Plasma-Enhanced Atomic Layer Deposition of ZnO Thin Film Transistor [C] . Jae-Min Kim, S. J. Lim, Doyoung Kim, International Conference on the Physics of Semiconductors . 2011

机译：UV处理对ZnO薄膜晶体管热和等离子体增强原子层沉积的影响
5. Plasma enhanced atomic layer deposition ZnO thin film transistors for large area circuit applications. [D] . Li, Yuanyuan. 2013

机译：用于大面积电路应用的等离子增强原子层沉积ZnO薄膜晶体管。
6. Effects of Rapid Thermal Annealing on the Structural Electrical and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition [O] . Jingjin Wu, Yinchao Zhao, Ce Zhou Zhao, 2016

机译：快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
7. Effects of the Al2O3interlayer in ZnO thin-film transistors fabricated via atomic layer deposition [O] . Seong-Hyeon Kim, Kwang-Seok Jeong, Ga-Won Lee, 2013

机译：通过原子层沉积制造的ZnO薄膜晶体管Al2O3 interrylay的影响
8. High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays. [R] . Uraoka, Y. 2011

机译：用于下一代显示器的原子层沉积制备的高性能和高可靠性ZnO薄膜晶体管。

The Effects of UV Treatment on Thermal and Plasma-Enhanced Atomic Layer Deposition of ZnO Thin Film Transistor

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