等离子体处理对非晶IGZO柔性薄膜晶体管性能的影响

摘要

研究了柔性基板上的薄膜晶体管,使用IGZO作为有源层,栅极绝缘层采用NH3等离子体和N2O等离子体分别进行处理,研究器件性能变化.结果表明等离子体类型及处理时间对阈值电压、场效应迁移率、开关比、亚阈值摆幅(SS)和偏压稳定性都有影响.TFT器件用NH3等离子体处理10 s显示出最佳的器件性能,阈值电压达到0.34 V,场效应迁移率为15.97 cm2/Vs,开关比为6.33×107,亚阈值摆幅为0.36 V/dec.提出的柔性IGZO-TFT是下一代柔性显示驱动装置较好选择.%Thin film transistors(TFTs)using In-Ga-Zn Oxide(IGZO)as active layer and the gate insulator was treated with NH3plasma and N2O plasma,respectively,which is fabricated on flexible Polyimid substrate.The performances of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage,field-effect mobility, Ion/Ioffratio,sub-threshold swing(SS)and bias stress stability of the devices.The TFT with a NH3plasma treatment for 10 second shows the best performance;specifically,threshold voltage of 0.34 V,field-effect mobility of 15.97 cm2/Vs, Ion/Ioffratio of 6.33×107,and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs can be used as driving devices in the next-generation flexible displays.