Gamma-X band mixing in GaAs/AlAs superlattice

机译：Gamma-X带混合在GaAs / Alas Superlattice中

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GaAs/AlAs superlattices (SLs) were grown by MOCVD. The temperature dependence of photoluminescence was measured. The type II-transition dominated PL spectrum was achieved by controlling the layers thickness of GaAs and AlAs at low temperature. Such SLs with long carrier lifetime is very attractive for low crosstalk semiconductor optical amplifier applications.

机译：GaAs / Alas Supertarics（SLS）由MOCVD种植。测量光致发光的温度依赖性。通过在低温下控制GaAs和Ala的层厚度来实现II型转变支配的PL光谱。具有长载体寿命的SLS对于低串扰半导体光学放大器应用非常有吸引力。

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《International conference on applications of photonic technology》|2003年||共4页
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Guoyun Ru; Z. B. Chen; X. Yu; Fow-Sen Choa; Terrance Worchesky; F. Liu; C. Lu; Jacob B. Khurgin;
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中图分类光电子技术的应用;
关键词
superlattice; band mixing; long carrier lifetime;

机译：超晶格;带混合;长载体寿命;

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专利

1. P-type AlAs/GaAs/AlAs Semiconductor/Superlattice DBR Grown by MBE [J] . 半导体光子学与技术（英文版） . 2001,第001期
2. Gamma-X coupling in diffused AlAs/GaAs superlattices [J] . Shtinkov N., Donchev V., Vlaev SJ. Physica status solidi, B. Basic research . 2000,第2期

机译：扩散AlAs / GaAs超晶格中的Gamma-X耦合
3. Carrier transport affected by Gamma-X transfer in type-I GaAs/AlAs superlattices [J] . Hosoda M., Mimura H., Tominaga K., Physical Review, B. Condensed Matter . 1998,第11期

机译：I型GaAs / AlAs超晶格中受Gamma-X传输影响的载流子传输
4. OBSERVATION OF GAMMA-X RESONANCES IN TYPE-I GAAS/ALAS SEMICONDUCTOR SUPERLATTICES - ANOMALY IN PHOTOLUMINESCENCE [J] . Hosoda M., Ohtani N., Tominaga K., Physical Review, B. Condensed Matter . 1997,第20期

机译：I型GAAS / ALAS半导体超晶格中GAMMA-X共振的观察-光致发光异常
5. Gamma-X band mixing in GaAs/AlAs superlattice [C] . Guoyun Ru, Z. B. Chen, X. Yu, International conference on applications of photonic technology . 2003

机译：Gamma-X带混合在GaAs / Alas Superlattice中
6. Three wave mixing in Periodically Quantum-Well-Intermixed GaAs:AlGaAs superlattices: Modeling, Optimization, and Parametric Generation. [D] . Sigal, Iliya. 2010

机译：GaAs：AlGaAs超晶格在周期性量子阱混合中的三波混合：建模，优化和参数生成。
7. First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility [O] . Ming Jiang, Haiyan Xiao, Shuming Peng, 2018

机译：GaAs / AlAs超晶格中点缺陷的第一性原理研究：相稳定性及其对能带结构和载流子迁移率的影响
8. Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method [O] . Botti, Silvana 2001

机译：体能带线性组合方法的GaAs / AlAs和GaAs /真空超晶格的电子态和光学性质
9. Carrier Density and Excitation Energy Dependent GAMMA-X Photoluminescence of Type-II GaAs/AlAs Superlattices [R] . Olbright, G. R. , Owyoung, A. , Hjalmarson, H. P. , 1988

机译：II型Gaas / alas超晶格的载流子密度和激发能量依赖Gamma-X光致发光

Gamma-X band mixing in GaAs/AlAs superlattice

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