Carrier Density and Excitation Energy Dependent GAMMA-X Photoluminescence of Type-II GaAs/AlAs Superlattices

摘要

Experimental and theoretical photoluminescence studies of ''Type-II'' GaAs/AlAs superlattices exhibit unusual behavior of GAMMA- and X-point features that reveal energy dependent relaxation channels and GAMMA- and X-point populations that depend on carrier heating and band filling. 10 refs., 2 figs. (ERA citation 14:017871)