Unusual Behavior on Line-Broadening of Photoluminescence Spectrum for Type-II Excitons in Highly Si-Doped GaAs/AlAs Short-Period-Superlattices

摘要

Through the photoluminescence (PL) measurements, we have studied the temperature dependence of the linewidth of PL spectra for type-II excitons in highly Si-doped GaAs/AlAs short-period-superlattices (SPS's). In low temperature regions, we have observed the strong increase of the linewidth of PL spectra with the temperature, different from the case of undoped GaAs/AlAs SPS's.