High-power, single-mode, 915-nm, AlInGaAs quantum-well lasers grown by MOCVD

摘要

We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, laser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemical-vapor deposition. Carbon, rather than zinc, was used as the p-doping source to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm~2, internal loss of 2.0 cm~(-1) and internal quantum efficiency of 93% were achieved. For 1500 μm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto A1N submounts using eutectic Au_(80)Sn_(20) solder. Ten burned-in devices have now been aged at a constant current of 450 mA (～300 mW) at 85°C for more than 1500 hours without measurable degradation.