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SUB-5NM DUAL-FIELD OVERLAY CONTROL IN JET AND FLASH IMPRINT LITHOGRAPHY USING TOPOLOGY OPTIMIZATION

机译:使用拓扑优化的喷气机和闪光印迹光刻中的子5nm双场覆盖控制

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This paper describes a method to realize sub-5nm overlay control simultaneously in two lithography fields, using the technique of topology optimization for the template design. The dual field overlay method has been developed for Jet and Flash Imprint Lithography (J-FIL), which is a specific form of Imprint Lithography [1]. J-FIL is described in detail in [2] and is being considered as a low-cost alternative to more expensive photolithography extension techniques such as self-aligned double/quadruple patterning (SADP/SAQP). Canon's J-FIL based manufacturing tools for NAND Flash and DRAM manufacturing are described in a recent paper [3].
机译:本文介绍了一种在两个光刻字段中同时实现Sub-5nm覆盖控制的方法,使用模板设计的拓扑优化技术。已经为喷射和闪光印记光刻(J-FIL)开发了双场覆盖方法,这是一种特定形式的压印光刻[1]。 J-FIL在[2]中详细描述,并且被认为是更昂贵的光刻延伸技术(例如自对准的双/四倍图案)(SADP / SAQP)的低成本替代方案。近期纸张[3]描述了NAND​​闪光灯和DRAM制造的基于佳能的J-FIL制造工具。

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