Leakage Currents in GaAs/AlGaAs-based Buried-heterostructure Laser Diodes with Semi-insulating GaInP:Fe Burying Layer

摘要

Leakage currents in the recently demonstrated GaAs/AlGaAs buried-heterostructure in-plane lasers (IPLs) and VCSELs with semi-insulating (SI) GaInP:Fe burying layer are experimentally and theoretically analysed. Analysis of the static characteristics and electroluminescence measurements indicate the existence of current paths through the SI burying-material. Two-dimensional simulations allow to identify the leakage mechanism.