GaIn Mass Transport and GaInP/GaAs Buried-Heterostructure Lasers.

摘要

Mass transport of a semiconductor alloy has been demonstrated using Ga(0.51)In(0.49)P which is lattice matched to Gallium Arsenide. Buried-heterostructure diode lasers with Ga(0.51)In(0.49)P as cladding and GaAs as the active layer have been made using this fabrication technique. Initial attempts produce devices with room-temperature lasing thresholds of approx. 33 mA and 15% differential power efficiency per facet. Keywords: Gallium indium phosphides, Heterojunctions, Semiconductor lasers, Reprints, Organometallic vapor phase epitaxy. (aw)