Semiconductor double-channel-planar-buried-heterostructure laser diode effective against leakage current

摘要

A semiconductor double-channel-planar-buried-heterostructure laser diode has a pair of double channel structures (26/27) provided on both sides of a multiple quantum well structure (23) for blocking leakage current, and the leakage current is decreased by a carrier density of a current blocking layer (26) of each double channel structure ranging between 3 x 10¹⁷ cm⁻³ and 1 x 10¹⁸ cm⁻³ and equal to or less than a carrier density of a cladding layer (24) on the multiple quantum well structure, a width of each double channel structure ranging between 3.0 microns and 5.0 microns or a width of the multiple quantum well structure ranging between 1.6 microns and 2.2 microns.