Semiconductor double-channel-planar-buried-heterostructure laser diode effective against leakage current

摘要

A semiconductor double-channel-planar-buried-heterostructure laser diode has a pair of double channel structures provided on both sides of a multiple quantum well structure for blocking leakage current, and the leakage current is decreased by a carrier density of a current blocking layer of each double channel structure ranging between 3× 10.sup.17 cm.sup.-3 and 1×10.sup.18 cm.sup.-3 and equal to or less than a carrier density of a cladding layer on the multiple quantum well structure, a width of each double channel structure ranging between 3.0 microns and 5.0 microns or a width of the multiple quantum well structure ranging between 1.6 microns and 2.2 microns.