GaAs/AlGaAs Buried Heterostructure Laser by Wet Etching and Semi-insulating GaInp:Fe Regrowth

摘要

Selective regrowth of semi-insulating Ga_(0.51)In_(0.49)P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 ℃ indicate on serious leakage current problems. The performance of the laser shows that the SI-GaInP:Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.