Gamma Radiation Induced Effects in GaAs MESFET's

摘要

The aim of the present work is to study the irradiation-induced effects in GaAs MESFET's. These devices were subjected to a gamma dose of 3.3 * 10~8 rads. From the forward I-V characteristics it is seen that after irradiation there is degradation in the Schottky barrier height of the gate and the ideality factor. Comparison of N_(c-v) versus depth profile obtained using C-V measurements before and after irradiation reveals decrease in the ionised dopant concentration. The transfer I-V characteristics measured at different frequencies have shown increased dispersion of g_m in the linear region and an increase in magnitude after irradiation. The increase in drift mobility has been attributed to irradiation induced order effect. The increase in dispersion of g_m can be due to generation of interface states at the GaAs-SI_3N_4 interface.