Bias control of long term radiation-induced transients in GaAs MESFETs

摘要

The effect of guard-ring bias and self-bias on radiation-induced long-term transients in GaAs D-MESFETs was measured for dose rates up to 10/sup 12/ rads (GaAs)/s. Results are presented for both ohmic and Schottky guard rings, with the substrate-bottom grounded as well as separately biased. Significant reduction in recovery times and transient amplitudes suggests that these are viable radiation-hardening techniques, allowing less dependence on the the device fabrication process.