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'High frequency' I-V curves for GaAs MESFETs through unique determination of small signal circuit parameters at multiple bias points

机译：通过独特确定多个偏置点的小信号电路参数，GaAs MESFET的“高频” IV曲线

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《》|2001年|P.709-711|共3页
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Meng; C.C.; Huang; G.H.;
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中图分类无线电电子学、电信技术;
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1. GaAs MESFET RF I-V curve through unique determination of small-signal circuit parameters from measured S parameters [J] . C. C. Meng, G. H. Huang Microwave and optical technology letters . 2002,第6期

机译：通过从测量的S参数中唯一确定小信号电路参数来确定GaAs MESFET RF I-V曲线
2. Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs [J] . Hiemstra D.M., Kizeevi A.A. IEEE Transactions on Nuclear Science . 1998,第6期

机译：GaAs MESFET的低频噪声性能，I-V曲线和旁通的剂量率和总剂量依赖性
3. Determination of diode parameters of a silicon solar cell from variation of slopes of the I-V curve at open circuit and short circuit conditions with the intensity of illumination [J] . Firoz Khan, S N Singh, M Husain Semiconductor science and technology . 2010,第1期

机译：根据开路和短路条件下I-V曲线的斜率随照明强度的变化确定硅太阳能电池的二极管参数
4. "High frequency" I-V curves for GaAs MESFETs through unique determination of small signal circuit parameters at multiple bias points [C] . C. C. Meng, G. H. Huang Asia-Pacific Microwave Conference . 2001

机译：通过在多个偏置点处的小信号电路参数独特确定GaAs Mesfet的“高频”I-V曲线
5. Techniques for Mixed-Signal Linearization and Large Signal Handling in Radio-Frequency Receiver Circuits. [D] . Keehr, Edward A. 2011

机译：射频接收器电路中的混合信号线性化和大信号处理技术。
6. Determination of unique power conversion efficiency of solar cell showing hysteresis in the I-V curve under various light intensities [O] . Ludmila Cojocaru, Satoshi Uchida, Koichi Tamaki, -1

机译：确定在各种光强度下在I-V曲线中显示迟滞的太阳能电池的独特功率转换效率
7. A large-signal model for GaAs MESFET's and HEMT's valid at multiple DC bias-points [O] . Cojocaru Vicentiu I., Brazil Thomas J. 1994

机译：GaAs MESFET和HEMT的大信号模型在多个DC偏置点均有效
8. The Automated DC Parameter Testing of GaAs MESFETs Using the Singer Automatic Integrated Circuit Test System [R] . Harper, T. L. 1980

机译：利用singer自动集成电路测试系统对Gaas mEsFET进行自动直流参数测试

'High frequency' I-V curves for GaAs MESFETs through unique determination of small signal circuit parameters at multiple bias points

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