GaAs MESFET RF I-V curve through unique determination of small-signal circuit parameters from measured S parameters

摘要

A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I-V curve for uniform-doped MESFETs. No dc measurement is needed in this method. The resulting rf I-V curve differs from the static dc I-V curve and is useful to predict rf performance.