The Automated DC Parameter Testing of GaAs MESFETs Using the Singer Automatic Integrated Circuit Test System

摘要

Procedures were developed to automate the manual testing of the DC parameters of GaAs MESFETs, integrated resistors and Schottky diodes. These devices are elements of a NAND/NOR logic circuit developed by Hewlett-Packard. The Singer Automatic Integrated Circuit Test System located at the Air Force Wright Aeronautical Laboratories, Avionics Laboratory (AFWAL/AADE), Wright-Patterson AFB, OH, was used to develop these procedures. The system was built by Singer Aerospace and Marine Systems, Glendale, California to test the DC parameters of semiconductor devices using Singer's Elucidate programming test language. The following DC parameters for the above devices were to be tested using the Singer tester: drain-to-source voltage (V sub DS), saturated drain current (I sub DSS) with gate-to-source voltage (V sub GS) at 0.0 volts, linear on-resistance and saturation resistance at V sub GS = 0.0 volts, pinch-off voltage (V sub P), transconductance (g sub M), breakdown voltage (BV)L at V sub GS = 0.0 volts, diode forward and reverse threshold voltages, and resistance. Test results have been obtained for the following MESFET parameters: V sub DS, I sub DSS, V sub GS, linear on-resistance and saturation resistance, V sub P and g sub M. Unfortunately, due to system measurement inaccuracies, these results do not compare favorably when compared iwth curve tracer I-V curves of the MESFETS.