GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates

摘要

Using a very thin layer of GaAs (2.1 mu m) on Si, the authors have fabricated GaAs MESFETs, 19 stage ring oscillators, and divide-by-2 frequency dividers with good yield. The MESFETs exhibited a maximum g/sub m/ of 153 mS/mm. The DCFL 19 stage ring oscillators had a minimum propagation delay of 52 ps/gate at a power dissipation of 1.3 mW/gate with a yield of 40%. The divide-by-2 circuits performed the frequency dividing operation up to 1.8 GHz.