Successful p-type doping of cubic GaN epilayers by carbon using an e-beam evaporation source is reported. At room temperature Hall-effect measurements of the C-doped cubic GaN epilayer gave hole concentrations and hole mobilities as high as 6×10{sup}17 cm{sup}(-3) and 200 cm{sup}2/Vs, respectively. The thermal activation energy of the C-acceptor is (215 ± 10) meV. Low temperature photoluminescence spectra show a new line appearing at 3.08 eV The emission energy increases with increasing e-beam evaporation power. This 3.08 eV line is attributed to a C related donor acceptor (D{sup}0A{sup}0) transition.
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