METHOD FOR MANUFACTURING P-TYPE GaN-BASED COMPOUND SEMICONDUCTOR, METHOD FOR ACTVATING P-TYPE DOPANT CONTAINED IN GaN-BASED COMPOUND SEMICONDUCTOR, GaN-BASED COMPOUND SEMICONDUCTOR DEVICE, AND GaN-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present invention increases the hole concentration and improves the electrical properties of a p-type gallium nitride compound semiconductor layer by activating the p-type dopant contained in the gallium nitride compound semiconductor using an electrochemical potentiostatic method. It is intended to provide a method which can be done and to provide a gallium nitride compound semiconductor device and a light emitting device manufactured using the method.