首页> 外文会议>Annual Device Research Conference >Improved Device Performance and Reliability of N-Channel and P-Channel Mosfets with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient

【24h】

Improved Device Performance and Reliability of N-Channel and P-Channel Mosfets with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient

机译：利用常规N / SUB 2 / O环境中Si的常规炉氧化制备的超薄栅极氧化物改善了N沟道和P沟道MOSFET的装置性能和可靠性

获取原文

页面导航

著录项
相似文献
相关主题

著录项

来源
《Annual Device Research Conference》|2001年||共56页
会议地点
作者
Lo G.Q.; Ting W.; Institute of Electric and Electronic Engineer;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类自动化技术、计算机技术;
关键词

相似文献

外文文献
中文文献
专利

1. Improved device performance and reliability of n-channel and p-channel MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N/sub 2/O ambient [J] . Lo G.Q., Ting W. IEEE Transactions on Electron Devices . 1991,第12期

机译：通过在纯N / sub 2 / O环境中对硅进行常规炉氧化制备的具有超薄栅极氧化物的n沟道和p沟道MOSFET的器件性能和可靠性得到改善
2. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing [J] . Wu Y., Lucovsky G. IEEE Transactions on Electron Devices . 2000,第7期

机译：通过远程等离子体增强CVD和沉积后快速热退火制备的具有氮化的Si-SiO / sub 2 /界面的超薄氮化硅/氧化物堆叠栅极电介质的PMOSFET的性能和可靠性
3. Improved radiation hardness of MOS devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processing [J] . Lo G.Q., Shih D.K. Electronics Letters . 1989,第13期

机译：通过快速热处理制备的具有超薄氮化氧化物栅极电介质的MOS器件的辐射硬度得到改善
4. Improved Device Performance and Reliability of N-Channel and P-Channel Mosfets with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient [C] . Lo, G.Q., Ting, . 2001

机译：通过在纯N / sub 2 / O环境中常规氧化Si制备的具有超薄栅氧化物的N沟道和P沟道MOSFET的器件性能和可靠性得到改善
5. Breakdown and reliability of CMOS devices with stacked oxide/nitride and oxynitride gate dielectrics prepared by RPECVD. [D] . Lee, Yi-Mu. 2003

机译：具有通过RPECVD制备的堆叠氧化物/氮化物和氮氧化物栅极电介质的CMOS器件的故障和可靠性。
6. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability [O] . Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, 2020

机译：使用双层门绝缘子在GaN-on-Si垂直沟槽MOSFET中：对性能和可靠性的影响
7. Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors [O] . Maitra Kingsuk, Bhat Navakanta 2003

机译：通过分析方法将通过n沟道金属-氧化物-半导体场效应晶体管的超薄栅极氧化物的直接隧穿电流的不同分量进行集成
8. Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides [R] . Asenov, Asen, Saini, S. 2000

机译：多晶硅栅极对具有薄栅氧化层的亚100nm mOsFET中随机掺杂诱导阈值电压波动的影响

Improved Device Performance and Reliability of N-Channel and P-Channel Mosfets with Ultrathin Gate Oxides Prepared by Conventional Furnace Oxidation of Si in Pure N/sub 2/O Ambient

著录项

相似文献

相关主题

期刊订阅