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Progress in placement control for ion beam stencil mask technology

机译:离子束模板掩模技术的放置控制进展

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A short review of the current status of IPL stencil mask development is presented in this paper. Stencil masks based on 6" Si-wafer have been fabricated with a membrane diameter of 126 mm. With a typical membrane thickness of 3μm, mechanical stability is a critical issue. The resulting placement errors have been measured using an LMS IPRO measurement tool and have been compared to Finite Element (FE) calculations simulating the fabrication process. Process-induced distortions can be predicted by FE calculations with an accuracy of up to 24 nm 3σ. In addition to large circular membranes, an alternative geometry has been considered. Masks with a quadratic membrane area of 60 x 60 mm~2 show IPDs of 3 σ= 39 nm which are about 4 times smaller than those of large circular membranes. This result agrees well with predictions of FE calculations. In order to protect the Si-mask against ion bombardment, a protective carbon layer is deposited onto the membrane, thus preventing stress changes due to ion implantation. The current status of the carbon deposition process will also be addressed briefly.
机译:本文介绍了对IPL模板掩模开发的当前状态的简短审查。基于6“Si-晶片的模板面罩已经制造,膜直径为126毫米。具有3μm的典型膜厚度,机械稳定性是一个关键问题。使用LMS IPRO测量工具测量所得到的放置误差并具有与模拟制造过程的有限元(Fe)计算进行了比较。可以通过高达24nm3σ的精度通过Fe计算来预测过程诱导的失真。除了大的圆形膜外,还考虑了替代几何形状。面具二次膜面积为60×60mm〜2的IPD为3σ= 39nm,其比大的圆形膜小约4倍。这结果与对Fe计算的预测很好。为了保护Si-mask对抗离子轰击,将保护碳层沉积在膜上,从而防止由于离子注入引起的应力变化。碳沉积过程的当前状态也将被解决IEFLY。

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