CONTROL OF DEFLECTION OF CHARGED PARTICLE BEAM TO STENCIL MASK

摘要

PURPOSE: To project correctly a charged particle beam on a stencil mask as a vertical beam to prevent distortion from being generated in a pattern to be exposed on a sample by a method wherein at the time of a calibration, the stencil mask for calibration formed with a plurality of through hole patterns of the same shape is used. ;CONSTITUTION: One of through hoe patterns in a stencil mask 12 is made to coincide on an optical axis C and a current IEB of a charged particle beam EB, which is made to pass through an aperture 13, is detected. Then, an emission point of the beam EB on a sample 14 at the time when the beam EB is made to pass through the through hole pattern is taken as an origin SO of the beam EB and an emission position S of the beam EB on the sample 14 is detected. The amounts of driving of a mask incident side deflector ID and a mask emitting side deflector OD are respectively changed about each of the through hole patterns and such the amounts of driving of the deflectors as a potential deviation X of the position S from the origin SO is reduced to the minimum and the detection current IEB is increased to the maximum are found. Thereby, a positional deviation in exposure can be corrected and a positional accuracy of exposure is improved.;COPYRIGHT: (C)1994,JPO&Japio