OBSERVATION OF BULK-TRAP INDUCED GENERATION-RECOMBINATION NOISE IN THE FULLY DEPLETED SOI MOSFET

摘要

Lorentzian-like noise is observed in the fully depleted SIMOX SOI MOSFET operating in the linear region, with the other surface biased in accumulation. The origin of this noise is attributed to the generation-recombination of carriers at bulk traps in the SOI film. The plateau level and cutoff frequency of the noise are significantly affected by both the temperature and the bias voltage of the opposite gate. This noise may provide a valuable indication of the bulk trap characteristics of the SOI film.