In this paper we studied the process of blistering and exfoliation on the crystal silicon surface and evolution of defects and strain in crystal silicon caused by hydrogen and helium co-implantation. It is shown that H~+ and He~+ co-implantation would produce a synergistic effect, which decrease the total implantation dose greatly, compared with the single ion implantation. We have also presented the effect of co-implantation and analyzed the different role of H~+ and He~+ in the process of exfoliation during annealing. It seems that the essential role of hydrogen is to interact chemically with the defects in silicon and create the H-stabled platelets, while the role of helium is to effuse into these platelets and assert pressure on the inner surface of these platelets. Keywords: SOI; co-implantation; hydrogen; helium
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