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Simple-yet-Accurate Analytic Models for Deep Submicron VLSI Interconnects

机译:深度亚微米VLSI互连的简单且准确的分析模型

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A three-order model-being as simple as the commonly used T model-is presented for deep-submicron VLSI interconnects. Yet we show that this mdoel yields less than 1percent error from exact distributed RC ladder network modeling for the roadmap technologies down to 0.18mum and up to 5 GHZ operating frequency. Being accurate, simple, and analytic, i.e., expressed directly in terms of the length and width of an interconnect wire, this model can be used for physical design optimization. Its accuracy and efficiency are demonstrated from numerical comparison with existing models, by using RCWIRE, a prototype SPICE-in, SPICE-out, model generator of interconnects.
机译:对于常用的T模型 - 呈现为深度亚微米VLSI互连,这是一个三阶模型。然而,我们表明,该MDOEL从准确的分布式RC梯形图网络建模低于180万,高达5 GHz工作频率的精确分布式RC梯形图网络建模不到1个误差。准确,简单和分析,即直接在互连线的长度和宽度方面表达,该模型可用于物理设计优化。其准确性和效率与现有型号的数值比较,通过使用RCWire,原型香料,香料,互连模型发生器。

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