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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Impact of unrealistic worst case modeling on the performance of VLSI circuits in deep submicron CMOS technologies
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Impact of unrealistic worst case modeling on the performance of VLSI circuits in deep submicron CMOS technologies

机译:深亚微米CMOS技术中不切实际的最坏情况建模对VLSI电路性能的影响

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摘要

The impact of process fluctuations on the variability of deep submicron (DSM) very large scale integration (VLSI) circuit performances is investigated in this paper. In particular, we show that as process dimensions stale down in the subhalfmicron region, the relative weight of process variability tends to increase, thus wearing down a non negligible portion of the benefits that are expected from minimum feature size scaling. We still show that in order to better exploit the advance of process technology, it is essential to adopt a realistic approach to worst case modeling [assigned probability technique (APT)]. The application of the APT technique to different test circuits designed in 0.35, 0.25, and 0.18 /spl mu/m CMOS technologies with a power supply ranging from 3.3 V down to 1 V will demonstrate how the manufacturability of DSM designs is going to be a vital factor for the successful implementation of high-performance or low-power systems in 0.18 /spl mu/m and lesser technologies.
机译:本文研究了工艺波动对深亚微米(DSM)超大规模集成电路(VLSI)电路性能变异性的影响。特别是,我们显示出随着亚半微米区域中的工艺尺寸过时,工艺变异性的相对权重趋于增加,因此损耗了最小特征尺寸缩放所期望的收益的不可忽略的部分。我们仍然表明,为了更好地利用过程技术的进步,必须采用一种现实的方法来进行最坏情况建模[分配概率技术(APT)]。将APT技术应用于以0.35、0.25和0.18 / splμm/ m CMOS技术设计的不同测试电路,电源范围为3.3 V至1 V,将证明DSM设计的可制造性将如何发展。成功实现0.18 / spl mu / m及更低技术水平的高性能或低功耗系统的关键因素。

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